Actualidad, perspectivas del desarrollo de la obtención de Silicio (página 3)
Enviado por Jorge Luis Garcia Jacomino
Tabla 1: Distribución de los costos aproximados por etapas de producción de un modulo fotovoltaico a partir de las materias primas
Tabla 2: Capacidad Fotovoltaica instalada acumulada anualmente por países en MW | ||||||||||||||
PAIS | 1992 | 1993 | 1994 | 1995 | 1996 | 1997 | 1998 | 1999 | 2000 | 2001 | 2002 | 2003 | 2004 | 2005 |
AUS | 7,3 | 8,9 | 10,7 | 12,7 | 15,7 | 18,7 | 22,5 | 25,3 | 29,2 | 33,6 | 39,6 | 45,6 | 52,3 | 60,6 |
AUT | 0,6 | 0,8 | 1,1 | 1,4 | 1,7 | 2,2 | 2,9 | 3,7 | 4,9 | 6,1 | 10,3 | 16,8 | 21,1 | 24,0 |
CAN | 1,0 | 1,2 | 1,5 | 9,9 | 2,6 | 3,4 | 4,5 | 5,8 | 7,2 | 8,8 | 10,0 | 11,8 | 13,9 | 16,7 |
CHE | 4,7 | 5,8 | 6,7 | 7,5 | 8,4 | 9,7 | 11,5 | 13,4 | 15,3 | 17,6 | 19,5 | 21,0 | 23,1 | 27,1 |
DNK | 0,1 | 0,1 | 0,1 | 0,2 | 0,4 | 0,5 | 1,1 | 1,5 | 1,5 | 1,6 | 9,9 | 2,3 | 2,7 | |
DEU | 5,6 | 8,9 | 12,4 | 17,7 | 27,8 | 41 ,8 | 53,8 | 69,4 | 113,7 | 194,6 | 278,0 | 431,0 | 794,0 | 1429 |
ESP | 4,0 | 4,6 | 5,7 | 6,5 | 6,9 | 7,1 | 8,0 | 9,1 | 12,0 | 15,7 | 20,5 | 27,0 | 37,0 | 57,4 |
FIN | 0,9 | 1,0 | 1,2 | 1,3 | 1,5 | 2,0 | 2,2 | 2,3 | 2,6 | 2,7 | 3,0 | 3,4 | ||
FRA | 1,8 | 2,0 | 2,4 | 2,9 | 4,4 | 6,1 | 7,6 | 9,1 | 11,3 | 13,9 | 17,2 | 21.1 | 26,0 | 33,0 |
GBR | 0,2 | 0,3 | 0,3 | 0,4 | 0,4 | 0,6 | 0,7 | 1,1 | 1,9 | 2,7 | 4,1 | 5,9 | 8,2 | 10,9 |
ISR | 0,1 | 0,1 | 0,2 | 0,2 | 0,2 | 0,3 | 0,3 | 0,4 | 0,4 | 0,5 | 0,5 | 0,5 | 0,9 | 1,0 |
ITA | 8,5 | 12,0 | 14,0 | 15,8 | 16,0 | 16,7 | 17,7 | 18,5 | 19,0 | 20,0 | 22,0 | 26,0 | 30,7 | 37,5 |
JPN | 19,0 | 24,3 | 31,2 | 43,4 | 59,6 | 91,3 | 133,4 | 208,6 | 330,2 | 452,8 | 636,8 | 859,6 | 1132 | 1142,9 |
KOR | 1,5 | 1,6 | 1,7 | 1,8 | 2,1 | 2,5 | 3,0 | 3,5 | 4,0 | 4,8 | 5,4 | 6,0 | 8,5 | 15,0 |
MEX | 5,4 | 7,1 | 8,8 | 9,2 | 10,0 | 11,0 | 12,0 | 12,9 | 13,9 | 15,0 | 16,2 | 17,1 | 18,2 | 18,7 |
NLD | 1,3 | 1,6 | 2,0 | 2,4 | 3,3 | 4,0 | 6,5 | 9,2 | 12,8 | 20,5 | 26,3 | 45,9 | 49,1 | 50,8 |
NOR | 3,8 | 4,1 | 4,4 | 4,7 | 4,9 | 5,2 | 5,4 | 5,7 | 6,0 | 6,2 | 6,4 | 6,6 | 6,9 | 7,3 |
PRT | 0,2 | 0,2 | 0,3 | 0,3 | 0,4 | 0,5 | 0,6 | 0,9 | 1,1 | 1,3 | 1,7 | 2,1 | 2,6 | 3,0 |
SWE | 0,8 | 1,0 | 1,3 | 1,6 | 1,8 | 2,1 | 2,4 | 2,6 | 2,8 | 3,0 | 3,3 | 3,6 | 3,9 | 4,2 |
USA | 43,5 | 50,3 | 57,8 | 66,8 | 76,5 | 88,2 | 100,1 | 117,3 | 138,8 | 167,8 | 212,2 | 275,2 | 376 | 479 |
Total | 110 | 136 | 164 | 199 | 245 | 314 | 396 | 520 | 729 | 989 | 1 334 | 1 828 | 2 607 | 3 700 |
Tabla 3: El costo de producción de 1Wp de modulo instalado listo para ser explotado acorde al mercado de varios países en distintos continentes
Tabla 7: Relación y cantidad de empresas especializadas en la producción de componentes de los módulos y distribución de los mismos
14. OTRAS FUENTES DE INFORMACIÓN RELACIONADAS ESPECIALMENTE CON LA PROTECCIÓN E HIGIENE DE LA SALUD EN EL ÁMBITO DE LA PRODUCCIÓN DE SILICIO PURO Y SU PROCESAMIENTO HASTA LA CELDA FOTOVOLTAICA
1. American National Standards Institute (ANSI). 1986.Safety Standard for Industrial Robots and Industrial Robot Systems. ANSI/RIA R15.06-1986. Nueva York: ANSI.
2. ASKMAR. 1990. Computer Industry: Critical Trends for the 1990"s. Saratoga, California: Electronic Trend Publications.
3. Asom, MT, J Mosovsky, RE Leibenguth, JL Zilko, G Cadet. 1991. Transient arsine generation during opening of solid source MBE chambers. J Cryst Growth 112(2-3):597–599.
4. Association of the Electronics, Telecommunications and Business Equipment Industries (EEA). 1991. Guidelines on the Use of Colophony (Rosin) Solder Fluxes in the Electronics Industry. Londres: Leichester House EEA.
5. Baldwin, DG, BW King, LP Scarpace. 1988. Ion implanters: Chemical and radiation safety. Solid State Technology 31(1):99–105.
6. Baldwin, DG, JH Stewart. 1989. Chemical and radiation hazards in semiconductor anufacturing. Solid State Technology 32(8):131–135.
7. Baldwin, DG, JR Rubin, MR Horowitz. 1993. Industrial hygiene exposures in semiconductor manufacturing. SSA Journal 7(1):19–21.
8. Baldwin, DG, ME Williams. 1996. Industrial hygiene.En Semiconductor Safety Handbook, dirigido por JD Bolmen. Park Ridge, Nueva Jersey: Noyes.
9. Baldwin, DG. 1985. Chemical exposure from carbon tetrachloride plasma aluminum etchers. Extended Abstracts, Electrochem Soc 85(2):449–450.
10. Bauer, S, I Wolff, N Werner, P Hoffman. 1992a. Health hazards in the semiconductor industry, a review. Pol J Occup Med 5(4):299–314.
11. Bauer, S, N Werner, I Wolff, B Damme, B Oemus, P Hoffman. 1992b. Toxicological investigations in the semiconductor industry: II. Studies on the subacute inhalation toxicity and genotoxicity of gaseous waste products from the aluminum plasma etching process. Toxicol Ind Health 8(6):431–444.
12. Bliss Industries. 1996. Solder Dross Particulate Capture System Literature. Fremont, California: Bliss Industries.
13. Bureau of Labor Statistics (BLS). 1993. Annual Survey of Occupational Injuries and Illnesses. Washington, DC: BLS, US Department of Labor.
14. Bureau of Labor Statistics (BLS). 1995. Employment and Wages Annual Averages, 1994. Bulletin. 2467. Washington, DC: BLS, US Department of Labor.
15. Clark, RH. 1985. Handbook of Printed Circuit Manufacturing. NuevaYork: Van Nostrand Reinhold Company.
16. Cohen, R. 1986. Radiofrequency and microwave radiation in microelectronics industry. En State of the Art Reviews—Occupational Medicine: The icroelectronics Industry, dirigido por J LaDou. Filadelfia, Pensilvania: Hanley & Belfus, Inc.
17. Conferencia Americana de Higienistas Industriales del Gobierno (ACGIH). 1989. Hazard Assessment and Control Technology in Semiconductor Manufacturing. Chelsea, Michigan: Lewis Publishers.
18. Conferencia Americana de Higienistas Industriales del Gobierno. 1993. Hazard Assessment and Control Technology in Semiconductor Manufacturing II. Cincinnati, Ohio: ACGIH.
19. Conferencia Americana de Higienistas Industriales del Gobierno. 1994. Documentation of Threshold Limit Value, Rosin Core Solder Thermal Decomposition Products, as Resin Acids-Colophony. Cincinnati, Ohio: ACGIH.
20. Content, RM. 1989. Control methods for metal and metalloids in III-V materials vapour -phase epitaxy. En Hazard Assessment and Control Technology in Semiconductor Manufacturing, dirigido por la Conferencia Americana de Higienistas Industriales del Gobierno. Chelsea, Michigan: Lewis Publishers.
21. Coombs, CF. 1988. Printed Circuits Handbook, 3ª ed. NuevaYork: McGraw-Hill Book Company.
22. Correa A, RH Gray, R Cohen, N Rothman, F Shah,H Seacat, M Corn. 1996. Ethylene glycol ethers and risks of spontaneous abortion and subfertility. Am J Epidemiol 143(7):707–717.
23. Crawford, WW, D Green, WR Knolle, HM Marcos, JA Mosovsky, RC Petersen, PA Testagrossa, GH Zeman. 1993. Magnetic field exposure in semiconductor
24. cleanrooms. En Hazard Assessment and Control Technology in Semiconductor Manufacturing II. Cincinnati, Ohio: ACGIH.
25. Escher, G, J Weathers, B Labonville. 1993. Safety design considerations in deep-UV excimer laser photolithography. En Hazard Assessment and Control Technology in Semiconductor Manufacturing II. Cincinnati, Ohio: Conferencia Americana de Higienistas Industriales del Gobierno.
26. Eskenazi B, EB Gold, B Lasley, SJ Samuels, SK Hammond, S Wright, MO Razor, CJ Hines, MB Schenker. 1995. Prospective monitoring of early fetal loss and clinical spontaneous abortion among female semiconductor workers. Am J Indust Med 28(6):833–846.
27. Flipp, N, H Hunsaker, P Herring. 1992. Investigation of hydride emissions during the maintenance of ion implantation equipment. Presentado en la American Industrial Hygiene Conference de junio1992, Boston—Paper 379 (no publicado).
28. Goh, CL, SK Ng. 1987. Airborne contact dermatitis to colophony in soldering flux. Contact Dermatitis 17(2):89–93.
29. Hammond SK, CJ Hines MF Hallock, SR Woskie, SAbdollahzadeh, CR Iden, E Anson, F Ramsey, MB Schenker. 1995. Tiered exposure assessment strategy in the Semiconductor Health Study. Am J Indust Med 28(6):661–680.
30. Harrison, RJ. 1986. Gallium arsenide. En State of the Art Reviews—Occupational Medicine: The Microelectronics Industry, publicado por J LaDou Filadelfia, Pensilvania: Hanley & Belfus, Inc.
31. Hathaway, GL, NH Proctor, JP Hughes, ML Fischman. 1991. Chemical Hazards of the Workplace, 3ª ed. Nueva York: Van Nostrand Reinhold.
32. Hausen, BM, K Krohn, E Budianto. 1990. Contact allergy due to colophony (VII). Sensitizing studies with oxidation products of abietic acid and related acids. Contact Dermat 23(5):352–358.
33. Health and Safety Commission. 1992. Approved Code of Practice—Control of Respiratory Sensitizers. Londres: Health and Safety Executive.
34. Helb, GK, RE Caffrey, ET Eckroth, QT Jarrett, CL Fraust, JA Fulton. 1983. Plasma processing: Some safety, health and engineering considerations. Solid State Technology 24(8):185–194.
35. Hines, CJ, S Selvin, SJ Samuels, SK Hammond, SR Woskie, MF Hallock, MB Schenker. 1995. Hierarchical cluster analysis for exposure assessment of workers in the Semiconductor Health Study. Am J Indust Med 28(6):713–722.
36. Horowitz, MR. 1992. Nonionizing radiation issues in a semiconductor R and D facility. Presentado en la American Industrial Hygiene Conference de junio 1992, Boston—Paper 122 (no publicado).
37. Jones, JH. 1988. Exposure and control assessment of semiconductor manufacturing. AIP Conf. Proc. (Photovoltaic Safety) 166:44–53.
38. LaDou, J (dir.). 1986. State of the Art Reviews—Occupational Medicine: The Microelectronics Industry. Filadelfia, Pensilvania: Hanley and Belfus, Inc.
39. Lassiter, DV. 1996. Work injury and illness surveillance on an international basis. Acta de la Third InternationalESHConference, Monterrey, California.
40. Leach-Marshall, JM. 1991. Analysis of radiation detected from exposed process elements from the krypton-85 fine leak testing system. SSA Journal 5(2):48–60.
41. Lead Industries Association. 1990. Safety in Soldering, Health Guidelines for Solderers and Soldering. Nueva York: Lead Industries Association, Inc.
42. Lenihan, KL, JK Sheehy, JH Jones. 1989. Assessment of exposures in gallium arsenide processing: A case study. En Hazard Assessment and Control Technology in Semiconductor Manufacturing, dirigido por la Conferencia Americana de Higienistas Industriales del Gobierno. Chelsea, Michigan: Lewis Publishers.
43. Maletskos, CJ, PR Hanley. 1983. Radiation protection considerations of ion implantation systems. IEEE Trans on Nuclear Science NS-30:1592–1596.
44. McCarthy, CM. 1985. Worker Exposure during Maintenance of Ion Implanters in the Semiconductor Industry. Tesis de master, Universidad de Utah, Salt Lake City,
45. Utah, 1984. Compilado en Extended Abstracts, Electrochem Soc 85(2):448. McCurdy SA, C Pocekay, KS Hammond, SR Woskie, SJ Samuels, MB Schenker. 1995. A crosssectional survey of respiratory and general health outcomes among semiconductor industry workers. Am J Indust Med 28(6):847–860.
46. McIntyre, AJ, BJ Sherin. 1989. Gallium arsenide: hazards, assessment, and control. Solid State Technology 32(9):119–126.
47. Microelectronics and Computer Technology Corporation (MCC). 1994. Electronics Industry Environmental Roadmap. Austin, Texas: MCC.
48. —. 1996. Electronics Industry Environmental Roadmap. Austin, Texas: MCC.
49. Mosovsky, JA, D Rainer, T Moses, WE Quinn. 1992. Transient hydride generation during IIIsemiconductor processing. Appl Occup Environ Hyg 7(6):375–384.
50. Mueller, MR, RF Kunesh. 1989. Safety and health implications of dry chemical etchers. En Hazard Assessment and Control Technology in Semiconductor Manufacturing, dirigido por la Conferencia Americana de Higienistas Industriales del Gobierno. Chelsea, Michigan: Lewis Publishers.
51. O"Mara, WC. 1993. Liquid Crystal Flat Panel Displays. Nueva York: Van Nostrand Reinhold.
52. PACE Inc. 1994. Fume Extraction Handbook. Laurel, Maryland: PACE Inc.
53. Pastides, H, EJ Calabrese, DW Hosmer, Jr, DR Harris. 1988. Spontaneous abortion and general illness symptoms among semiconductor manufacturers. J Occup Med 30:543–551.
54. Pocekay D, SA McCurdy, SJ Samuels, MB Schenker. 1995. A cross-sectional study of musculoskeletal symptoms and risk factors in semiconductor workers. Am J Indust Med 28(6):861–871.
55. Rainer, D, WE Quinn, JA Mosovsky, MT Asom.1993. III-V transient hydride generation, Solid State Technology 36(6):35–40.
56. Rhoades, BJ, DG Sands, VD Mattera. 1989. Safety and environmental control systems used in chemical vapor deposition (CVD) reactors at AT&T–Microelectronics-Reading. Appl Ind Hyg 4(5):105–109.
57. Rogers, JW. 1994. Radiation safety in semiconductors. Presentado en la Semiconductor Safety Association Conference de abril 1994, Scottsdale, AZ (no publicado).
58. Rooney, FP, J Leavey. 1989. Safety and health considerations of an x-ray lithography source. En Hazard Assessment and Control Technology in Semiconductor Manufacturing, publicado por la Conferencia Americana de Higienistas Industriales del Gobierno. Chelsea, Michigan: Lewis Publishers.
59. Rosenthal, FS, S Abdollahzadeh. 1991. Assessment of extremely low frequency (ELF) electric and magnetic fields in microelectronics fabrication rooms. Appl Occup Environ Hyg 6(9):777–784
Autor:
Dr. Lic. Rafael Quintana Puchol
M. Sc. Ing. Jorge Luis Garcia Jacomino
Dr. Lorenzo Perdomo Gonzalez
Ing. Vladimir Rodriguez Palmeo
Centro de Investigación de Soldadura (CIS)
Facultad de Ingeniería Mecánica
Universidad Central "Marta Abreu" de Las Villas
Carretera a Camajuaní Km. 5½
Santa Clara, Villa Clara, CP. 54830
Cuba
? (53) (42) 223983
Página anterior | Volver al principio del trabajo | Página siguiente |